First-Principles Study of the Structural, Optical, Electronic and Strain-Dependent Properties of Caesium Bismuth Halide Cs₃Bi₂X₉ (X = I, Br, Cl) for Photovoltaic Applications
DOI: https://doi.org/10.55373/mjchem.v28i4.55
Keywords: Cs3Bi2I9, Cs3Bi2Br9, Cs3Bi2Cl9, lead-free perovskite, CASTEP
Abstract
In recent years, increasing environmental and stability concerns surrounding lead-based perovskites have driven extensive research toward the development of lead-free alternatives. Among the promising candidates, caesium bismuth halides (Cs3Bi2X9, X = I, Br, Cl) have attracted significant attention due to their excellent chemical stability, favourable electronic properties, and tuneable band gap energies. In this work, a comprehensive density functional theory (DFT) study was conducted within the CASTEP framework to investigate the structural, optical, electronic, and mechanical strain-dependent properties of Cs3Bi2I9, Cs3Bi2Br9, and Cs3Bi2Cl9. The optimized crystal structures confirmed their hexagonal and trigonal layered phases with stable lattice configurations. Optical absorption spectra revealed strong absorptions with coefficients on the order of 105 cm⁻¹, with the absorption edge systematically shifting towards shorter wavelengths from Cs3Bi2I9 to Cs3Bi2Br9 to Cs3Bi2Cl9, corresponding to increasing band gap values. The calculated indirect band gaps were 1.96 eV (Cs3Bi2I9), 2.46 eV (Cs3Bi2Br9), and 3.05 eV (Cs3Bi2Cl9). Under mechanical strain (±5 %), Cs3Bi2I9 exhibited significant band gap tunability, increasing to 2.39 eV (+5 %) and 2.37 eV (−5 %), whereas Cs3Bi2Br9 showed moderate reductions with 2.43 eV (+5 %) and 2.20 eV (-5 %), and Cs3Bi2Cl9 with 3.00 eV (+5 %) and 2.98 eV (-5 %). These findings suggest that strain engineering effectively modulated the optoelectronic response, particularly in iodine-based compounds. Overall, this study provides valuable insights into the intrinsic and strain-dependent properties of Cs3Bi2X9 perovskites and underscores their potential as sustainable, lead-free materials for next-generation photovoltaic and optoelectronic applications.
