Preparation and Characterization of New Oxide Ion Conductors in Bi2O3- As2O5 System

  • S L Lee
Keywords: bismuth arsenate, oxide ion conductor


Materials in xBi2O3-As2O5 binary system: 1 ≤ x ≤ 7, were prepared by solid state reaction. XRD shows that single phase materials were formed when x = 5, 5.5, 5.667, 5.75, 6 and 7. The symmetry and space group of the materials were determined. Compositions with 5 ≤ x ≤ 6.25 are solid solutions. Electrical properties of the single phase materials were studied using ac impedance spectroscopy at a frequency range of 10 Hz to 13 MHz. These materials are thermally stable and appear to be oxide ion conductors. Highest conductivity was obtained in Bi23As4O44.5 with σ value of 5.66 x 10 -5ohm-1cm-1, Ea = 0.72 eV at 300oC.